Preliminary Technical Information
Depletion Mode
MOSFET
IXTY1R6N50D2
IXTA1R6N50D2
IXTP1R6N50D2
V DSX
I D(on)
R DS(on)
=
>
500V
1.6A
2.3 Ω
N-Channel
TO-252 (IXTY)
G
S
D (Tab)
Symbol
V DSX
V GSX
V GSM
Test Conditions
T J = 25 ° C to 150 ° C
Continuous
Transient
Maximum Ratings
500
± 20
± 30
V
V
V
TO-263 AA (IXTA)
G
P D
T J
T JM
T stg
T L
T SOLD
M d
T C = 25 ° C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
100
- 55 ... +150
150
- 55 ... +150
300
260
1.13 / 10
W
° C
° C
° C
° C
° C
Nm/lb.in.
S
TO-220AB (IXTP)
D (Tab)
Weight
TO-252
TO-263
TO-220
0.35
2.50
3.00
g
g
g
G
DS
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
? Normally ON Mode
? International Standard Packages
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
? Molding Epoxies Meet UL 94 V-0
Flammability Classification
BV DSX
V GS = - 5V, I D = 250 μ A
500
V
Advantages
V GS(off)
V DS = 25V, I D = 100 μ A
- 2.0
- 4.0
V
? Easy to Mount
I GSX
I DSX(off)
V GS = ± 20V, V DS = 0V
V DS = V DSX , V GS = - 5V
T J = 125 ° C
± 100 nA
2 μ A
25 μ A
? Space Savings
? High Power Density
Applications
R DS(on)
I D(on)
V GS = 0V, I D = 0.8A, Note 1
V GS = 0V, V DS = 25V, Note 1
1.6
2.3
Ω
A
?
?
?
Audio Amplifiers
Start-up Circuits
Protection Circuits
? 2009 IXYS CORPORATION, All Rights Reserved
?
?
?
Ramp Generators
Current Regulators
Active Loads
DS100179A(12/09)
相关PDF资料
IXTA200N055T2 MOSFET N-CH 55V 200A TO-263
IXTA200N075T7 MOSFET N-CH 75V 200A TO-263-7
IXTA200N075T MOSFET N-CH 75V 200A TO-263
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IXTA220N04T2-7 MOSFET N-CH 40V 220A TO-263-7
IXTA220N04T2 MOSFET N-CH 40V 220A TO-263
IXTA220N055T7 MOSFET N-CH 55V 220A TO-263-7
IXTA220N055T MOSFET N-CH 55V 220A TO-263
相关代理商/技术参数
IXTA200N055T2 功能描述:MOSFET 200 Amps 55V 0.0042 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA200N075T 功能描述:MOSFET 200 Amps 75V 4.4 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA200N075T7 功能描述:MOSFET 200 Amps 75V 4.4 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA200N085T 功能描述:MOSFET 200 Amps 85V 5.0 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA-200N085T 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:N-Channel Enhancement Mode Avalanche Rated
IXTA200N085T7 功能描述:MOSFET 200 Amps 85V 5.0 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA220N04T2 功能描述:MOSFET 220 Amps 40V 0.0035 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA220N04T2-7 功能描述:MOSFET 220 Amps 40V 0.0035 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube